Step1: Product
Vishay SI7850DP-T1-E3
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Manufacturer
Manufacturer No
SI7850DP-T1-E3
Date Code
18+
Quantity
3,000
Availability
In Stock
Package
PowerPAK SO EP
Packaging
Tape and Reel
Description
Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO EP T/R
Detailed Description
Create an effective common drain amplifier using this SI7850DP-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 1800 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Datasheet
HTS
COMPONENTS
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
8
Automotive
No
Lead Shape
No Lead
PCB changed
8
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single Quad Drain Triple Source
Package Width
5.89
Package Height
1.02
Package Length
4.9
Supplier Package
PowerPAK SO EP
Maximum IDSS (uA)
1
Manufacturer Lead Time
52 weeks
Typical Fall Time (ns)
12
Typical Rise Time (ns)
10
Number of Elements per Chip
1
Maximum Gate Resistance (Ohm)
2.2
Minimum Gate Resistance (Ohm)
0.5
Maximum Power Dissipation (mW)
4500
Typical Gate Charge @ 10V (nC)
18
Typical Gate Charge @ Vgs (nC)
18@10V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
110
Typical Turn-On Delay Time (ns)
10
Maximum Drain-Source Voltage (V)
60
Typical Gate Plateau Voltage (V)
3.9
Typical Turn-Off Delay Time (ns)
25
Maximum Diode Forward Voltage (V)
1.2
Typical Diode Forward Voltage (V)
0.85
Typical Gate to Drain Charge (nC)
5.3
Maximum Gate Threshold Voltage (V)
3
Minimum Gate Threshold Voltage (V)
1
Typical Gate to Source Charge (nC)
3.4
Typical Reverse Recovery Time (ns)
50
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
6.2
Operating Junction Temperature (°C)
-55 to 150
Maximum Drain-Source Resistance (mOhm)
22@10V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
40
Typical Drain-Source Resistance @ 25°C (mOhm)
18@10V|25@4.5V
Maximum Power Dissipation on PCB @ TC=25°C (W)
4.5
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
10.3
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
70
| Attribute | Value |
|---|---|
| HTS | COMPONENTS |
| PPAP | No |
| EU RoHS | Compliant |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.89 |
| Package Height | 1.02 |
| Package Length | 4.9 |
| Supplier Package | PowerPAK SO EP |
| Maximum IDSS (uA) | 1 |
| Manufacturer Lead Time | 52 weeks |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 10 |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 2.2 |
| Minimum Gate Resistance (Ohm) | 0.5 |
| Maximum Power Dissipation (mW) | 4500 |
| Typical Gate Charge @ 10V (nC) | 18 |
| Typical Gate Charge @ Vgs (nC) | 18@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 110 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain-Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 3.9 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.85 |
| Typical Gate to Drain Charge (nC) | 5.3 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 3.4 |
| Typical Reverse Recovery Time (ns) | 50 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6.2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Drain-Source Resistance (mOhm) | 22@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 40 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 18@10V|25@4.5V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 4.5 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 10.3 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 70 |
Purchase & Inquiry
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Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 28, 2026 - Oct 29, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
Packages
