Step1: Product
Vishay SI2333DDS-T1-GE3
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Manufacturer
Manufacturer No
SI2333DDS-T1-GE3
Date Code
22+
Quantity
1,365
Availability
In Stock
Package
SOT-23
Packaging
Tape and Reel
Description
Trans MOSFET P-CH 12V 6A 3-Pin SOT-23 T/R
Detailed Description
As an alternative to traditional transistors, the SI2333DDS-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 1200 mW. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
Datasheet
HTS
COMPONENTS
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
3
Automotive
No
Lead Shape
Gull-wing
PCB changed
3
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
P
Configuration
Single
Package Width
1.3
Package Height
0.95
Package Length
2.92
Supplier Package
SOT-23
Maximum IDSS (uA)
1
Process Technology
0.18um
Standard Package Name
SOT
Manufacturer Lead Time
52 weeks
Typical Fall Time (ns)
20
Typical Rise Time (ns)
24
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
1200
Typical Gate Charge @ Vgs (nC)
14@4.5V|23@8V
Maximum Gate-Source Voltage (V)
±8
Typical Turn-On Delay Time (ns)
26
Maximum Drain-Source Voltage (V)
12
Typical Turn-Off Delay Time (ns)
45
Maximum Gate Threshold Voltage (V)
1
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
6
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
1275@6V
Maximum Drain-Source Resistance (mOhm)
28@4.5V
Maximum Gate-Source Leakage Current (nA)
100
| Attribute | Value |
|---|---|
| HTS | COMPONENTS |
| PPAP | No |
| EU RoHS | Compliant |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 1.3 |
| Package Height | 0.95 |
| Package Length | 2.92 |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Process Technology | 0.18um |
| Standard Package Name | SOT |
| Manufacturer Lead Time | 52 weeks |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 24 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1200 |
| Typical Gate Charge @ Vgs (nC) | 14@4.5V|23@8V |
| Maximum Gate-Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 26 |
| Maximum Drain-Source Voltage (V) | 12 |
| Typical Turn-Off Delay Time (ns) | 45 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1275@6V |
| Maximum Drain-Source Resistance (mOhm) | 28@4.5V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
Purchase & Inquiry
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Important Notes
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2. Since inventory and pricing may change from time to time, our sales manager will reconfirm your order and notify you if any updates are needed.
Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 28, 2026 - Oct 29, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
Packages
