Step1: Product
Vishay SI2325DS-T1-E3
Image shown is a representation only
Manufacturer
Manufacturer No
SI2325DS-T1-E3
Date Code
2308
Quantity
24,228
Availability
In Stock
Package
SOT-23
Packaging
Tape and Reel
Description
Trans MOSFET P-CH 150V 0.53A 3-Pin SOT-23 T/R
Detailed Description
Make an effective common gate amplifier using this SI2325DS-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 750 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Datasheet
HTS
COMPONENTS
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
3
Automotive
No
Lead Shape
Gull-wing
PCB changed
3
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
P
Configuration
Single
Package Width
1.4(Max)
Package Height
1.02(Max)
Package Length
3.04(Max)
Supplier Package
SOT-23
Maximum IDSS (uA)
1
Standard Package Name
SOT
Manufacturer Lead Time
42 weeks
Typical Fall Time (ns)
11
Typical Rise Time (ns)
11
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
1250
Typical Gate Charge @ 10V (nC)
7.7
Typical Gate Charge @ Vgs (nC)
7.7@10V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
30
Typical Turn-On Delay Time (ns)
7
Maximum Drain-Source Voltage (V)
150
Typical Gate Plateau Voltage (V)
5
Typical Turn-Off Delay Time (ns)
16
Typical Gate to Drain Charge (nC)
2.5
Maximum Gate Threshold Voltage (V)
4.5
Minimum Gate Threshold Voltage (V)
2.5
Typical Gate to Source Charge (nC)
1.5
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
0.53
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
340@25V
Typical Reverse Recovery Charge (nC)
90
Maximum Drain-Source Resistance (mOhm)
1200@10V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
1.6
Typical Drain-Source Resistance @ 25°C (mOhm)
1000@10V|1050@6V
Maximum Power Dissipation on PCB @ TC=25°C (W)
1250
Typical Reverse Transfer Capacitance @ Vds (pF)
16@25V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
0.53
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
166
| Attribute | Value |
|---|---|
| HTS | COMPONENTS |
| PPAP | No |
| EU RoHS | Compliant |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 1.4(Max) |
| Package Height | 1.02(Max) |
| Package Length | 3.04(Max) |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOT |
| Manufacturer Lead Time | 42 weeks |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 11 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1250 |
| Typical Gate Charge @ 10V (nC) | 7.7 |
| Typical Gate Charge @ Vgs (nC) | 7.7@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 30 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Drain-Source Voltage (V) | 150 |
| Typical Gate Plateau Voltage (V) | 5 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Typical Gate to Drain Charge (nC) | 2.5 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Minimum Gate Threshold Voltage (V) | 2.5 |
| Typical Gate to Source Charge (nC) | 1.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.53 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 340@25V |
| Typical Reverse Recovery Charge (nC) | 90 |
| Maximum Drain-Source Resistance (mOhm) | 1200@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 1.6 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 1000@10V|1050@6V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1250 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 16@25V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.53 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 166 |
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Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 28, 2026 - Oct 29, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
Packages
