Vishay Siliconix SI1035X-T1-GE3

Vishay Siliconix SI1035X-T1-GE3 electronic component

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Manufacturer
Manufacturer No
SI1035X-T1-GE3
Package
SOT-563, SOT-666
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET N/P-CH 20V 0.18A SC89
Detailed Description
Mosfet Array 20V 180mA, 145mA 250mW Surface Mount SC-89 (SOT-563F)
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Series
TrenchFET®
Packaging
Tape & Reel (TR); Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate
Power - Max
250mW
Manufacturer
Vishay Siliconix
Configuration
N and P-Channel
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Vgs(th) (Max) @ Id
400mV @ 250µA (Min)
Base Product Number
SI1035
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
5Ohm @ 200mA, 4.5V
Supplier Device Package
SC-89 (SOT-563F)
Gate Charge (Qg) (Max) @ Vgs
0.75nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
180mA, 145mA
AttributeValue
SeriesTrenchFET®
PackagingTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Power - Max250mW
ManufacturerVishay Siliconix
ConfigurationN and P-Channel
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Vgs(th) (Max) @ Id400mV @ 250µA (Min)
Base Product NumberSI1035
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs5Ohm @ 200mA, 4.5V
Supplier Device PackageSC-89 (SOT-563F)
Gate Charge (Qg) (Max) @ Vgs0.75nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C180mA, 145mA

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 28, 2026 - Oct 29, 2026
Shipping Fee
Calculated based on your destination

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