Step1: Product
TOSHIBA RFM04U6P(TE12L,F)
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Manufacturer
Manufacturer No
RFM04U6P(TE12L,F)
Date Code
23+
Quantity
10,000
Availability
In Stock
Package
PW-Mini
Packaging
Tape and Reel
Description
Trans RF MOSFET N-CH 16V 2A 4-Pin(3+Tab) PW-Mini T/R
Detailed Description
This RFM04U6P(TE12L,F) RF amplifier from Toshiba is a semiconductor-based transistor that amplifies or switches electronic signals and electrical power in a circuit. Its maximum power dissipation is 7000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This RF power MOSFET has a minimum operating temperature of -45 °C and a maximum of 150 °C. This N channel RF power MOSFET operates in depletion mode.
Datasheet
HTS
8541.29.00.55
Tab
Tab
PPAP
No
EU RoHS
Compliant
Material
Si
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
4
Automotive
No
PCB changed
3
Availability
No Stock Available
Channel Mode
Depletion
Channel Type
N
Maximum VSWR
20
Configuration
Single Dual Source
Package Width
2.5
Package Height
1.6(Max)
Package Length
4.6(Max)
Supplier Package
PW-Mini
Standard Package Name
SOT
Typical Power Gain (dB)
13.3
Maximum Output Power (W)
4.3(Typ)
Number of Elements per Chip
1
Typical Drain Efficiency (%)
70
Maximum Power Dissipation (mW)
7000
Maximum Gate-Source Voltage (V)
3
Maximum Drain-Source Voltage (V)
16
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-45
Maximum Continuous Drain Current (A)
2
| Attribute | Value |
|---|---|
| HTS | 8541.29.00.55 |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 3 |
| Availability | No Stock Available |
| Channel Mode | Depletion |
| Channel Type | N |
| Maximum VSWR | 20 |
| Configuration | Single Dual Source |
| Package Width | 2.5 |
| Package Height | 1.6(Max) |
| Package Length | 4.6(Max) |
| Supplier Package | PW-Mini |
| Standard Package Name | SOT |
| Typical Power Gain (dB) | 13.3 |
| Maximum Output Power (W) | 4.3(Typ) |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 70 |
| Maximum Power Dissipation (mW) | 7000 |
| Maximum Gate-Source Voltage (V) | 3 |
| Maximum Drain-Source Voltage (V) | 16 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -45 |
| Maximum Continuous Drain Current (A) | 2 |
Purchase & Inquiry
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Important Notes
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2. Since inventory and pricing may change from time to time, our sales manager will reconfirm your order and notify you if any updates are needed.
Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 28, 2026 - Oct 29, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
Packages
