Texas Instruments CSD86336Q3D

Texas Instruments CSD86336Q3D electronic component

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Manufacturer
Manufacturer No
CSD86336Q3D
Package
8-PowerTDFN
Packaging
Bulk
Description
MOSFET 2N-CH 25V 20A 8VSON
Detailed Description
Mosfet Array 25V 20A (Ta) 6W Surface Mount 8-VSON (3.3x3.3)
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Series
NexFET™
Packaging
Bulk
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate, 5V Drive
Power - Max
6W
Manufacturer
Texas Instruments
Configuration
2 N-Channel (Half Bridge)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Vgs(th) (Max) @ Id
1.9V @ 250µA, 1.6V @ 250µA
Base Product Number
CSD86336Q3
Operating Temperature
-55°C ~ 125°C
Rds On (Max) @ Id, Vgs
9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Supplier Device Package
8-VSON (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs
3.8nC @ 45V, 7.4nC @ 45V
Drain to Source Voltage (Vdss)
25V
Input Capacitance (Ciss) (Max) @ Vds
494pF @ 12.5V, 970pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
AttributeValue
SeriesNexFET™
PackagingBulk
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate, 5V Drive
Power - Max6W
ManufacturerTexas Instruments
Configuration2 N-Channel (Half Bridge)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Vgs(th) (Max) @ Id1.9V @ 250µA, 1.6V @ 250µA
Base Product NumberCSD86336Q3
Operating Temperature-55°C ~ 125°C
Rds On (Max) @ Id, Vgs9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Supplier Device Package8-VSON (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs3.8nC @ 45V, 7.4nC @ 45V
Drain to Source Voltage (Vdss)25V
Input Capacitance (Ciss) (Max) @ Vds494pF @ 12.5V, 970pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C20A (Ta)

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Estimated Ship Date
Oct 28, 2026 - Oct 29, 2026
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