Step1: Product
PN Junction Semiconductor P3M12025K4
Image shown is a representation only
Manufacturer
Manufacturer No
P3M12025K4
Package
TO-247-4
Packaging
Tube
Description
SICFET N-CH 1200V 112A TO-247-4
Detailed Description
N-Channel 1200 V 112A 577W Through Hole TO-247-4L
Datasheet
Mfr
PN Junction Semiconductor
Grade
Automotive
Series
P3M
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+19V, -8V
Technology
SiCFET (Silicon Carbide)
Mounting Type
Through Hole
Qualification
AEC-Q101
Package / Case
TO-247-4
Vgs(th) (Max) @ Id
2.2V @ 50mA (Typ)
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
35mOhm @ 50A, 15V
Power Dissipation (Max)
577W
Supplier Device Package
TO-247-4L
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
15V
Current - Continuous Drain (Id) @ 25°C
112A
| Attribute | Value |
|---|---|
| Mfr | PN Junction Semiconductor |
| Grade | Automotive |
| Series | P3M |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | +19V, -8V |
| Technology | SiCFET (Silicon Carbide) |
| Mounting Type | Through Hole |
| Qualification | AEC-Q101 |
| Package / Case | TO-247-4 |
| Vgs(th) (Max) @ Id | 2.2V @ 50mA (Typ) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 50A, 15V |
| Power Dissipation (Max) | 577W |
| Supplier Device Package | TO-247-4L |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 112A |
Purchase & Inquiry
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RFQ (Request for Quote)
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Our sales team will respond to your request by email within 24 hours.
Important Notes
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2. Since inventory and pricing may change from time to time, our sales manager will reconfirm your order and notify you if any updates are needed.
Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 28, 2026 - Oct 29, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
Packages
