NXP Semiconductors MRF8S9220HSR3

NXP Semiconductors MRF8S9220HSR3 electronic component

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Manufacturer
Manufacturer No
MRF8S9220HSR3
Date Code
14+
Quantity
20
Availability
In Stock
Package
NI-780S
Packaging
Tape and Reel
Description
Trans RF MOSFET N-CH 70V 3-Pin NI-780S T/R
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
HTS
8541.29.00.55
PPAP
No
SVHC
Yes
EU RoHS
Compliant
Mounting
Surface Mount
ECCN (US)
5A991g.
Packaging
Tape and Reel
Pin Count
3
Automotive
No
PCB changed
3
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Maximum VSWR
10
Configuration
Single
Package Width
9.91(Max)
Package Height
4.32(Max)
Package Length
20.7(Max)
Supplier Package
NI-780S
Mode of Operation
1-Carrier W-CDMA
Maximum Frequency (MHz)
960
Minimum Frequency (MHz)
920
Typical Power Gain (dB)
19.4
Maximum Output Power (W)
65(Typ)
Number of Elements per Chip
1
Typical Drain Efficiency (%)
35.7
Maximum Gate-Source Voltage (V)
10
Maximum Drain-Source Voltage (V)
70
Maximum Operating Temperature (°C)
225
Minimum Operating Temperature (°C)
-65
AttributeValue
HTS8541.29.00.55
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)5A991g.
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height4.32(Max)
Package Length20.7(Max)
Supplier PackageNI-780S
Mode of Operation1-Carrier W-CDMA
Maximum Frequency (MHz)960
Minimum Frequency (MHz)920
Typical Power Gain (dB)19.4
Maximum Output Power (W)65(Typ)
Number of Elements per Chip1
Typical Drain Efficiency (%)35.7
Maximum Gate-Source Voltage (V)10
Maximum Drain-Source Voltage (V)70
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 28, 2026 - Oct 29, 2026
Shipping Fee
Calculated based on your destination

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