Step1: Product
NXP Semiconductors AFT05MS003NT1
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Manufacturer
Manufacturer No
AFT05MS003NT1
Date Code
22+
Quantity
3,000
Availability
In Stock
Package
SOT-89A
Packaging
Tape and Reel
Description
Trans RF MOSFET N-CH 30V 4-Pin(3+Tab) SOT-89A T/R
Datasheet
HTS
COMPONENTS
Tab
Tab
PPAP
No
SVHC
Yes
Type
MOSFET
EU RoHS
Compliant
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
4
Automotive
No
PCB changed
3
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Maximum VSWR
65
Configuration
Single Dual Source
Package Width
2.6(Max)
Package Height
1.6(Max)
Package Length
4.6(Max)
Supplier Package
SOT-89A
Maximum IDSS (uA)
2
Mode of Operation
CW
Standard Package Name
SOT
Maximum Frequency (MHz)
941
Minimum Frequency (MHz)
1.8
Typical Power Gain (dB)
20.8
Maximum Output Power (W)
3(Typ)
Number of Elements per Chip
1
Typical Drain Efficiency (%)
68.3
Maximum Power Dissipation (mW)
30500
Maximum Gate-Source Voltage (V)
12
Maximum Drain-Source Voltage (V)
30
Maximum Gate Threshold Voltage (V)
2.6
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-40
Typical Forward Transconductance (S)
3.1
Typical Input Capacitance @ Vds (pF)
38.5@7.5V
Typical Output Capacitance @ Vds (pF)
23.2@7.5V
Maximum Gate-Source Leakage Current (nA)
500
Typical Reverse Transfer Capacitance @ Vds (pF)
1.1@7.5V
| Attribute | Value |
|---|---|
| HTS | COMPONENTS |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Type | MOSFET |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 3 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 65 |
| Configuration | Single Dual Source |
| Package Width | 2.6(Max) |
| Package Height | 1.6(Max) |
| Package Length | 4.6(Max) |
| Supplier Package | SOT-89A |
| Maximum IDSS (uA) | 2 |
| Mode of Operation | CW |
| Standard Package Name | SOT |
| Maximum Frequency (MHz) | 941 |
| Minimum Frequency (MHz) | 1.8 |
| Typical Power Gain (dB) | 20.8 |
| Maximum Output Power (W) | 3(Typ) |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 68.3 |
| Maximum Power Dissipation (mW) | 30500 |
| Maximum Gate-Source Voltage (V) | 12 |
| Maximum Drain-Source Voltage (V) | 30 |
| Maximum Gate Threshold Voltage (V) | 2.6 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Typical Forward Transconductance (S) | 3.1 |
| Typical Input Capacitance @ Vds (pF) | 38.5@7.5V |
| Typical Output Capacitance @ Vds (pF) | 23.2@7.5V |
| Maximum Gate-Source Leakage Current (nA) | 500 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 1.1@7.5V |
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Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 28, 2026 - Oct 29, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
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