MagnaChip Semiconductor MDF18N50TH

MagnaChip Semiconductor MDF18N50TH electronic component

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Manufacturer No
MDF18N50TH
Package
TO-220F
Packaging
Tube
Description
Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220F Tube
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
HTS
8541.29.00.55
Tab
Tab
PPAP
Unknown
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Through Hole
ECCN (US)
EAR99
Packaging
Tube
Pin Count
3
Automotive
Unknown
Lead Shape
Through Hole
PCB changed
3
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Package Width
4.93(Max)
Package Height
16.13(Max)
Package Length
10.71(Max)
Supplier Package
TO-220F
Maximum IDSS (uA)
1
Standard Package Name
TO
Manufacturer Lead Time
8 weeks
Typical Fall Time (ns)
44
Typical Rise Time (ns)
74
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
37000
Typical Gate Charge @ 10V (nC)
48
Typical Gate Charge @ Vgs (nC)
48@10V
Maximum Gate-Source Voltage (V)
±30
Typical Turn-On Delay Time (ns)
58
Maximum Drain-Source Voltage (V)
500
Typical Turn-Off Delay Time (ns)
110
Maximum Gate Threshold Voltage (V)
5
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
18
Typical Input Capacitance @ Vds (pF)
2430@25V
Maximum Drain-Source Resistance (mOhm)
270@10V
Maximum Gate-Source Leakage Current (nA)
100
AttributeValue
HTS8541.29.00.55
TabTab
PPAPUnknown
EU RoHSCompliant
CategoryPower MOSFET
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveUnknown
Lead ShapeThrough Hole
PCB changed3
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.93(Max)
Package Height16.13(Max)
Package Length10.71(Max)
Supplier PackageTO-220F
Maximum IDSS (uA)1
Standard Package NameTO
Manufacturer Lead Time8 weeks
Typical Fall Time (ns)44
Typical Rise Time (ns)74
Number of Elements per Chip1
Maximum Power Dissipation (mW)37000
Typical Gate Charge @ 10V (nC)48
Typical Gate Charge @ Vgs (nC)48@10V
Maximum Gate-Source Voltage (V)±30
Typical Turn-On Delay Time (ns)58
Maximum Drain-Source Voltage (V)500
Typical Turn-Off Delay Time (ns)110
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18
Typical Input Capacitance @ Vds (pF)2430@25V
Maximum Drain-Source Resistance (mOhm)270@10V
Maximum Gate-Source Leakage Current (nA)100

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 28, 2026 - Oct 29, 2026
Shipping Fee
Calculated based on your destination

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