Infineon Technologies IRFH4251DTRPBF

Infineon Technologies IRFH4251DTRPBF electronic component

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Manufacturer No
IRFH4251DTRPBF
Package
8-PowerVDFN
Packaging
Tape & Reel (TR)
Description
MOSFET 2N-CH 25V 64A/188A TISON8
Detailed Description
Mosfet Array 25V 64A, 188A 31W, 63W Surface Mount PG-TISON-8
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Series
FASTIRFET™
Packaging
Tape & Reel (TR)
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate
Power - Max
31W, 63W
Manufacturer
Infineon Technologies
Configuration
2 N-Channel (Dual), Schottky
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
2.1V @ 35µA
Base Product Number
IRFH4251
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
3.2mOhm @ 30A, 10V
Supplier Device Package
PG-TISON-8
Gate Charge (Qg) (Max) @ Vgs
15nC @ 4.5V
Drain to Source Voltage (Vdss)
25V
Input Capacitance (Ciss) (Max) @ Vds
1314pF @ 13V
Current - Continuous Drain (Id) @ 25°C
64A, 188A
AttributeValue
SeriesFASTIRFET™
PackagingTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Power - Max31W, 63W
ManufacturerInfineon Technologies
Configuration2 N-Channel (Dual), Schottky
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Vgs(th) (Max) @ Id2.1V @ 35µA
Base Product NumberIRFH4251
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs3.2mOhm @ 30A, 10V
Supplier Device PackagePG-TISON-8
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Drain to Source Voltage (Vdss)25V
Input Capacitance (Ciss) (Max) @ Vds1314pF @ 13V
Current - Continuous Drain (Id) @ 25°C64A, 188A

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 28, 2026 - Oct 29, 2026
Shipping Fee
Calculated based on your destination

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