Diodes Incorporated DMN10H220LPDW-13

Diodes Incorporated DMN10H220LPDW-13 electronic component

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Manufacturer No
DMN10H220LPDW-13
Date Code
2333
Quantity
12,500
Availability
In Stock
Package
8-PowerTDFN
Packaging
Tape & Reel (TR)
Description
MOSFET 2N-CH 100V 8A PWRDI50
Detailed Description
Mosfet Array 100V 8A (Tc) 2.2W (Ta) Surface Mount, Wettable Flank PowerDI5060-8 (Type R)
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Packaging
Tape & Reel (TR)
Technology
MOSFET (Metal Oxide)
Power - Max
2.2W (Ta)
Manufacturer
Diodes Incorporated
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount, Wettable Flank
Package / Case
8-PowerTDFN
Vgs(th) (Max) @ Id
2.5V @ 250µA
Base Product Number
DMN10
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
222mOhm @ 2A, 10V
Supplier Device Package
PowerDI5060-8 (Type R)
Gate Charge (Qg) (Max) @ Vgs
6.7nC @ 10V
Drain to Source Voltage (Vdss)
100V
Input Capacitance (Ciss) (Max) @ Vds
384pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
AttributeValue
PackagingTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
Power - Max2.2W (Ta)
ManufacturerDiodes Incorporated
Configuration2 N-Channel (Dual)
Mounting TypeSurface Mount, Wettable Flank
Package / Case8-PowerTDFN
Vgs(th) (Max) @ Id2.5V @ 250µA
Base Product NumberDMN10
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs222mOhm @ 2A, 10V
Supplier Device PackagePowerDI5060-8 (Type R)
Gate Charge (Qg) (Max) @ Vgs6.7nC @ 10V
Drain to Source Voltage (Vdss)100V
Input Capacitance (Ciss) (Max) @ Vds384pF @ 25V
Current - Continuous Drain (Id) @ 25°C8A (Tc)

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 29, 2026 - Oct 30, 2026
Shipping Fee
Calculated based on your destination

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